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IRF2804S 数据表(PDF) 2 Page - International Rectifier

部件名 IRF2804S
功能描述  Advanced Process Technology
Download  13 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF2804S 数据表(HTML) 2 Page - International Rectifier

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IRF2804/S/L
2
www.irf.com
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by T
Jmax, starting TJ = 25°C,
L=0.24mH, RG = 25Ω, IAS = 75A, VGS =10V.
Part not recommended for use above this value.
ƒ ISD ≤ 75A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
„ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS.
† Limited by T
Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
‰ Max R
DS(on) for D
2Pak and TO-262 (SMD) devices.
S
D
G
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
∆ΒV
DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.031
–––
V/°C
RDS(on) SMD
Static Drain-to-Source On-Resistance
–––
1.5
2.0
m
RDS(on) TO-220 Static Drain-to-Source On-Resistance
–––
1.8
2.3
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
130
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
160
240
nC
Qgs
Gate-to-Source Charge
–––
41
62
Qgd
Gate-to-Drain ("Miller") Charge
–––
66
99
td(on)
Turn-On Delay Time
–––
13
–––
ns
tr
Rise Time
–––
120
–––
td(off)
Turn-Off Delay Time
–––
130
–––
tf
Fall Time
–––
130
–––
LD
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
6450
–––
pF
Coss
Output Capacitance
–––
1690
–––
Crss
Reverse Transfer Capacitance
–––
840
–––
Coss
Output Capacitance
–––
5350
–––
Coss
Output Capacitance
–––
1520
–––
Coss eff.
Effective Output Capacitance
–––
2210
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
280
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
1080
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
5684ns
Qrr
Reverse Recovery Charge
–––
67
100
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 32V
VGS = 10V
f
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A
f
VGS = 10V, ID = 75A
f
TJ = 25°C, IF = 75A, VDD = 20V
di/dt = 100A/µs
f
TJ = 25°C, IS = 75A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 10V
f
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 32V
ƒ = 1.0MHz, See Fig. 5
VDS = VGS, ID = 250µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
RG = 2.5Ω
ID = 75A
VDS = 10V, ID = 75A
VDD = 20V
ID = 75A
VGS = 20V
VGS = -20V


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