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1N5401K 数据表(PDF) 1 Page - Diotec Semiconductor

部件名 1N5401K
功能描述  Silicon Rectifier Diodes ??Silizium-Gleichrichterdioden
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制造商  DIOTEC [Diotec Semiconductor]
网页  http://www.diotec.com
标志 DIOTEC - Diotec Semiconductor

1N5401K 数据表(HTML) 1 Page - Diotec Semiconductor

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1N5400K ... 1N5408K
1N5400K ... 1N5408K
Silicon Rectifier Diodes – Silizium-Gleichrichterdioden
Version 2014-10-06
Dimensions - Maße [mm]
Nominal current
Nennstrom
3 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...1000 V
Plastic case
Kunststoffgehäuse
~ DO-15
DO-204AC
Weight approx.
Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
1N5400K
50
50
1N5401K
100
100
1N5402K
200
200
1N5404K
400
400
1N5406K
600
600
1N5407K
800
800
1N5408K
1000
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
3 A 1)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
20 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
100/110 A
Rating for fusing, Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
50 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
©
http://www.diotec.com/
1
Ø 0.8±0.05
Ø 3±0.05


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