STP90N55F4 datasheet(4/13 Pages) STMICROELECTRONICS

部件名	STP90N55F4

功能描述	N-channel 55 V, 0.0064 , 90 A, TO-220 STripFET DeepGATE Power MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 13 page

Electrical characteristics

STP90N55F4

4/13

Doc ID 022110 Rev 1

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

(VGS = 0)

ID = 250 µA

55

V

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = 55 V

1

µA

VDS = 55 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 45 A

0.0064

0.008

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

4800

pF

Coss

Output capacitance

-

350

-

pF

Crss

Reverse transfer

capacitance

210

pF

Qg

Total gate charge

VDD = 27.5 V, ID = 90 A,

VGS = 10 V

Figure 14

90

nC

Qgs

Gate-source charge

-

25

-

nC

Qgd

Gate-drain charge

26

nC

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD = 27.5 V, ID = 90 A

RG =4.7 Ω VGS = 10 V

Figure 13

-

20

60

-

ns

td(off)

tf

Turn-off-delay time

Fall time

VDD = 27.5 V, ID = 90 A,

RG =4.7 Ω, VGS = 10 V

Figure 13

-

55

30

-

ns

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