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74HCT244BQ 数据表(PDF) 7 Page - NXP Semiconductors |
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74HCT244BQ 数据表(HTML) 7 Page - NXP Semiconductors |
7 / 18 page 74HC_HCT244 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 4 — 24 September 2012 7 of 18 NXP Semiconductors 74HC244; 74HCT244 Octal buffer/line driver; 3-state [1] tpd is the same as tPHL and tPLH. [2] ten is the same as tPZH and tPZL. [3] tdis is the same as tPHZ and tPLZ. [4] tt is the same as tTHL and tTLH. [5] CPD is used to determine the dynamic power dissipation (PD in W): PD =CPD VCC2 fi N+ (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (C L VCC 2 f o) = sum of outputs. ten enable time nOE to nYn; see Figure 7 [2] VCC = 2.0 V - 36 150 190 225 ns VCC = 4.5 V - 13 30 38 45 ns VCC = 6.0 V - 10 26 33 38 ns tdis disable time nOE to nYn or see Figure 7 [3] VCC = 2.0 V - 39 150 190 225 ns VCC = 4.5 V - 14 30 38 45 ns VCC = 6.0 V - 11 26 33 38 ns tt transition time see Figure 6 [4] VCC = 2.0 V - 14 60 75 90 ns VCC = 4.5 V - 5 12 15 18 ns VCC = 6.0 V - 4 10 13 15 ns CPD power dissipation capacitance per buffer; VI =GND to VCC [5] -35- - - pF 74HCT244 tpd propagation delay nAn to nYn; see Figure 6 [1] VCC = 4.5 V - 13 22 28 33 ns VCC = 5.0 V; CL =15pF - 11 - - - ns ten enable time nOE to nYn; VCC = 4.5 V; see Figure 7 [2] -15 3038 45 ns tdis disable time nOE to nYn; VCC = 4.5 V; see Figure 7 [3] -15 2531 38 ns tt transition time VCC = 4.5 V; see Figure 6 [4] - 5 12 15 18 ns CPD power dissipation capacitance per buffer; VI =GND to VCC 1.5 V [5] -35- - - pF Table 7. Dynamic characteristics …continued GND = 0 V; for load circuit see Figure 8. Symbol Parameter Conditions 25 C 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) |
类似零件编号 - 74HCT244BQ |
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类似说明 - 74HCT244BQ |
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