数据搜索系统,热门电子元器件搜索 |
|
2SK2912 数据表(PDF) 3 Page - Hitachi Semiconductor |
|
2SK2912 数据表(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SK2912(L), 2SK2912(S) 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 60 ——V I D = 10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16V, VDS = 0 Zero gate voltege drain current I DSS —— 10 µAV DS = 60 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.5 — 2.5 V I D = 1mA, VDS = 10V Static drain to source on state R DS(on) —1520m Ω I D = 20A, VGS = 10V* 1 resistance R DS(on) —2540m Ω I D = 20A, VGS = 4V* 1 Forward transfer admittance |y fs|20 35 — S I D = 20A, VDS = 10V* 1 Input capacitance Ciss — 1500 — pF V DS = 10V Output capacitance Coss — 720 — pF V GS = 0 Reverse transfer capacitance Crss — 200 — pF f = 1MHz Turn-on delay time t d(on) — 20 — ns I D = 20A, VGS = 10V Rise time t r — 180 — ns R L = 1.5Ω Turn-off delay time t d(off) — 200 — ns Fall time t f — 200 — ns Body to drain diode forward voltage V DF — 0.95 — V I F = 40A, VGS = 0 Body to drain diode reverse recovery time t rr —70— V I F = 40A, VGS = 0 diF/ dt = 50A/ µs Note: 1. Pulse test |
类似零件编号 - 2SK2912 |
|
类似说明 - 2SK2912 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |