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2SK1772 数据表(PDF) 3 Page - Hitachi Semiconductor |
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2SK1772 数据表(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK1772 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 30 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS —— 50 µAV DS = 25 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.0 — 2.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 0.4 0.6 Ω I D = 0.5 A V GS = 10 V* 1 — 0.6 0.85 Ω I D = 0.5 A V GS = 4 V* 1 Forward transfer admittance |y fs| 0.6 1.0 — S I D = 0.5 A V DS = 10 V* 1 Input capacitance Ciss — 85 — pF V DS = 10 V Output capacitance Coss — 65 — pF V GS = 0 Reverse transfer capacitance Crss — 20 — pF f = 1 MHz Turn-on delay time t d(on) — 10 — ns I D = 0.5 A Rise time t r — 15 — ns V GS = 10 V Turn-off delay time t d(off) — 40 — ns R L = 60 Ω Fall time t f —30—ns Body to drain diode forward voltage V DF — 1.2 — V I F = 1 A, VGS = 0 Body to drain diode reverse recovery time t rr — 30 — ns I F = 1 A, VGS = 0, di F/dt = 50 A/µs Note 1. Pulse Test |
类似零件编号 - 2SK1772 |
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类似说明 - 2SK1772 |
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