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2SK2422 数据表(PDF) 3 Page - Hitachi Semiconductor |
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2SK2422 数据表(HTML) 3 Page - Hitachi Semiconductor |
3 / 6 page 2SK1637, 2SK2422 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SK1637 V (BR)DSS 600 — — V I D = 10 mA, VGS = 0 breakdown voltage 2SK2422 650 Gate to source breakdown voltage V (BR)GSS ±30 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25 V, VDS = 0 Zero gate voltage 2SK1637 I DSS — — 250 µAV DS = 500 V, VGS = 0 drain current 2SK2422 V DS = 550 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static Drain to source 2SK1637 R DS(on) — 1.8 2.4 Ω I D = 2 A, VGS = 10 V * 1 on state resistance 2SK2422 — 2.0 2.6 Forward transfer admittance |yfs| 2.2 3.5 — S I D = 2 A, VDS = 10 V * 1 Input capacitance Ciss — 600 — pF V DS = 10 V, VGS = 0, Output capacitance Coss — 140 — pF f = 1 MHz Reverse transfer capacitance Crss — 25 — pF Turn-on delay time t d(on) —8 —ns I D = 2 A, VGS = 10 V, Rise time t r — 30 — ns R L = 15 Ω Turn-off delay time t d(off) —60 — ns Fall time t f —35 — ns Body to drain diode forward voltage V DF — 0.9 — V I F = 4 A, VGS = 0 Body to drain diode reverse recovery time t rr — 300 — ns I F = 4 A, VGS = 0, di F/dt = 100 A/µs Note 1. Pulse test See characteristics curves of 2SK1402, 2SK1402A. |
类似零件编号 - 2SK2422 |
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类似说明 - 2SK2422 |
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