2SK1160 datasheet(6/9 Pages) HITACHI

部件名	2SK1160

功能描述	Silicon N-Channel MOS FET

Download	9 Pages

Scroll/Zoom	100%

制造商	HITACHI [Hitachi Semiconductor]

网页	http://www.renesas.com/eng

标志

6 / 9 page

2SK1159, 2SK1160

6

5,000

1.0

20

Reverse Drain Current IDR (A)

2,000

200

0.5

2

10

50

500

1,000

Body to Drain Diode Reverse

Recovery Time

0.2

100

5

di/dt = 100 A/

µs, Ta = 25°C

VGS = 0

Pulse Test

10,000

20

50

Drain to Source Voltage VDS (V)

100

10

30

40

10

1,000

Typical Capacitance vs.

Drain to Source Voltage

VGS = 0

f = 1 MHz

0

Ciss

Coss

Crss

500

40

100

Gate Charge Qg (nc)

Dynamic Input Characteristics

400

100

20

60

80

0

200

300

VDS

20

16

4

0

8

12

VDD = 100 V

250 V

400 V

ID = 8 A

250 V

VDD = 400 V

VGS

100 V

500

1.0

20

Drain Current ID (A)

200

20

0.5

2

10

5

50

100

0.2

10

5

Switching Characteristics

td (off)

tf

tr

td (on)

VGS = 10 V, VDD = 30 V

PW = 2

µs, duty < 1%

•

类似零件编号 - 2SK1160

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Renesas Technology Corp	2SK1160-E	108Kb / 9P	Silicon N Channel MOS FET Sep 07, 2005

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