2SJ587

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DSS

-20

V

Gate to source voltage

V

GSS

±10

V

Drain current

I

D

-50

mA

Drain peak current

I

D(pulse)

Note1

-200

mA

Body-drain diode reverse drain current

I

DR

-50

mA

Channel dissipation

Pch

Note 2

100

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x 20 x0.7 mm)

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

-20

—

—

V

I

Gate to source breakdown

voltage

V

(BR)GSS

±10

—

—

V

I

Gate to source leak current

I

GSS

——

±5

µAV

Zero gate voltege drain

current

I

DSS

——-1

µAV

Gate to source cutoff voltage

V

GS(off)

-0.8

—

-1.8

V

I

Static drain to source on state R

DS(on)

—

4.1

5.0

Ω

I

Note 3

resistance

R

DS(on)

—

6.0

8.5

Ω

I

Note 3

Forward transfer admittance

|y

32.5

50

—

mS

I

Note 3

Input capacitance

Ciss

—

13

—

pF

V

Output capacitance

Coss

—

10

—

pF

V

Reverse transfer capacitance Crss

—

1.8

—

pF

f = 1 MHz

Turn-on delay time

t

d(on)

—

22—ns

I

Rise time

t

r

—

48—ns

R

Turn-off delay time

t

d(off)

—

50—ns

Fall time

t

f

—

60—ns

Note:

3. Pulse test

4. Marking is DP