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ST3424 数据表(PDF) 3 Page - Stanson Technology |
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ST3424 数据表(HTML) 3 Page - Stanson Technology |
3 / 6 page ST3424 N Channel Enhancement Mode MOSFET 4.0A 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3424 2014. V1 3 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 60 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1 2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V 1 uA VDS=48V,VGS=0V TJ=55℃ 10 Drain-source On-Resistance RDS(on) VGS=10V,ID=4.0A VGS=4.5V,ID=3.0A 50 56 55 62 mΩ Forward Transconductance gfs VDS=4.5V,ID=5.8A 11 S Diode Forward Voltage VSD IS=1.7A,VGS=0V 1.1 V Dynamic Total Gate Charge Qg VDS=15V VGS=10V ID≡6.7A 8 nC Gate-Source Charge Qgs 1.4 Gate-Drain Charge Qgd 3.0 Input Capacitance Ciss VDS=15V VGS=0V F=1MHz 400 pF Output Capacitance Coss 240 Reverse Transfer Capacitance Crss 30 Turn-On Time td(on) tr VDD=15V RL=15Ω ID=1.0A VGEN=10V RG=6Ω 6.6 14 nS 10 20 Turn-Off Time td(off) tf 19 39 10 20 |
类似零件编号 - ST3424 |
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类似说明 - ST3424 |
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