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2SJ550L 数据表(PDF) 4 Page - Hitachi Semiconductor |
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2SJ550L 数据表(HTML) 4 Page - Hitachi Semiconductor |
4 / 9 page 2SJ550(L),2SJ550(S) 4 –4.0 –3.2 –2.4 –1.6 –0.8 0 –4 –8 –12 –16 –20 I = –15 A D –10 A –5 A Pulse Test –0.1 –1 –10 –100 –0.3 –3 –30 10 1 0.01 0.40 0.32 0.24 0.16 0.08 –40 0 40 80 120 160 0 Pulse Test 0.1 0.03 0.3 3 V = –4 V GS –10 V Pulse Test –5, –10, –15 A V = –4 V GS –10 V I = –15 A D –10 A –5 A –0.1 –1 –10 –100 –0.3 –3 –30 100 10 0.1 1 0.3 3 30 25 °C Tc = –25 °C 75 °C V = –10 V DS Pulse Test Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current I (A) D Forward Transfer Admittance vs. Drain Current |
类似零件编号 - 2SJ550L |
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类似说明 - 2SJ550L |
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