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2SJ505S 数据表(PDF) 3 Page - Hitachi Semiconductor |
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2SJ505S 数据表(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SJ505(L), 2SJ505(S) 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS –60 — — V I D = –10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — –10 µAV DS = –60 V, VGS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16V, VDS = 0 Gate to source cutoff voltage V GS(off) –1.0 — –2.0 V I D = –1mA, VDS = –10V Static drain to source on state R DS(on) — 0.017 0.022 Ω I D = –25A, VGS = –10V* 1 resistance R DS(on) — 0.024 0.036 Ω I D = –25A, VGS = –4V* 1 Forward transfer admittance |y fs| 2739— S I D = 25A, VDS = 10V* 1 Input capacitance Ciss — 4100 — pF V DS = –10V Output capacitance Coss — 2100 — pF V GS = 0 Reverse transfer capacitance Crss — 450 — pF f = 1MHz Turn-on delay time t d(on) — 32 — ns V GS = –10V, ID = –10A Rise time t r — 225 — ns R L = 3Ω Turn-off delay time t d(off) — 530 — ns Fall time t f — 330 — ns Body to drain diode forward voltage V DF — –1.1 — V I F = –50A, VGS = 0 Body to drain diode reverse recovery time t rr — 110 — ns I F = –50A, VGS = 0 diF/ dt = 50A/ µs Note: 1. Pulse test |
类似零件编号 - 2SJ505S |
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类似说明 - 2SJ505S |
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