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2SJ506 数据表(PDF) 6 Page - Hitachi Semiconductor |
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2SJ506 数据表(HTML) 6 Page - Hitachi Semiconductor |
6 / 10 page 2SJ506(L), 2SJ506(S) 6 100 50 20 10 –0.1 –0.2 –1 0 –10 –20 –30 –40 –50 200 100 50 1000 200 500 100 10 20 5 –0.1 –0.2 –1 –2 –5 –0.5 –5 20 10 –10 500 –20 –50 –2 = 1000 2000 5000 Ciss Coss Crss V = 0 f = 1 MHz GS –20 0 –10 –20 –30 –40 0 0 –4 –8 –12 –16 –20 –50 816 24 32 40 DS V GS V V = –25 V –10 V –5 V DD V = –5 V –10 V –25 V DD I = –10 A D 50 –0.5 –10 r t d(off) t t f d(on) t V = –10 V, V = –10 V PW = 10 µs, duty < 1 % GS DD di / dt = 50 A / µs V = 0, Ta = 25 °C GS Body to Drain Diode Reverse Recovery Time Reverse Drain Current I (A) DR Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current I (A) D |
类似零件编号 - 2SJ506 |
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类似说明 - 2SJ506 |
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