2SJ181S datasheet(3/10 Pages) HITACHI

部件名	2SJ181S

功能描述	Silicon P-Channel MOS FET

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制造商	HITACHI [Hitachi Semiconductor]

网页	http://www.renesas.com/eng

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3 / 10 page

2SJ181(L), 2SJ181(S)

3

40

30

20

10

0

50

100

150

200

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage

V

(V)

DS

Maximum Safe Operation Area

–10

–20

–50

–100 –200

–500 –1000

–10

–3

–1

–0.3

–0.1

–0.03

–0.01

Operation in

this area is

limited by R DS(on)

Ta = 25 °C

10 µs

DC

Operation

(Tc

=

25

°C)

1 ms

100

µs

PW

=

10

ms

(1shot)

–1.0

–0.8

–0.6

–0.4

–0.2

0

Drain to Source Voltage

V

(V)

DS

Typical Output Characteristics

–10

–20

–30

–40

–50

–10 V

–5 V

Pulse Test

V

= –4 V

GS

–4.5 V

–6 V

–0.5

–0.4

–0.3

–0.2

–0.1

0

Gate to Source Voltage

V

(V)

GS

Typical Transfer Characteristics

–2

–4

–6

–8

–10

Tc = –25 °C

75 °C

25 °C

V

= –20 V

Pulse Test

DS

类似零件编号 - 2SJ181S

制造商	部件名	数据表	功能描述
Renesas Technology Corp	2SJ181S	87Kb / 8P	Silicon P Channel MOS FET
Guangdong Kexin Industr...	2SJ181S	45Kb / 2P	P-Channel MOS FET For High-Speed Switching
Renesas Technology Corp	2SJ181STL-E	87Kb / 8P	Silicon P Channel MOS FET
Renesas Technology Corp	2SJ181STR-E	121Kb / 7P	Silicon P Channel MOS FET
Guangdong Kexin Industr...	2SJ181S	1Mb / 4P	P-Channel MOSFET

More results

类似说明 - 2SJ181S

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	2SJ221	48Kb / 8P	Silicon P-Channel MOS FET
	2SJ363	37Kb / 7P	Silicon P-Channel MOS FET
	2SJ386	38Kb / 7P	Silicon P-Channel MOS FET
Renesas Technology Corp	2SJ181(L)	109Kb / 7P	Silicon P Channel MOS FET
	2SJ555	109Kb / 10P	Silicon P Channel MOS FET
	2SJ518	102Kb / 9P	Silicon P Channel MOS FET
	2SJ526	110Kb / 10P	Silicon P Channel MOS FET
	2SJ542	107Kb / 10P	Silicon P Channel MOS FET
	2SJ543	107Kb / 10P	Silicon P Channel MOS FET
	2SJ550	95Kb / 9P	Silicon P Channel MOS FET
	2SJ551	95Kb / 9P	Silicon P Channel MOS FET