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FMA3A 数据表(PDF) 2 Page - Rohm |
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FMA3A 数据表(HTML) 2 Page - Rohm |
2 / 7 page www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet EMA3 / UMA3N / FMA3A lAbsolute maximum ratings (Ta = 25°C) <For Tr1 and Tr2 in common> Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation EMA3 / UMA3N FMA3A Junction temperature Range of storage temperature lElectrical characteristics (Ta = 25°C) <For Tr1 and Tr2 in common> *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. Parameter Symbol Values Unit VCBO - 50 V IC(MAX.) *1 - 100 mA VCEO - 50 V VEBO - 5 V Tj 150 °C Tstg - 55 to +150 °C Unit Collector-base breakdown voltage BVCBO IC= -50mA - 50 - - V Parameter Symbol Conditions Min. Typ. Max. V Emitter-base breakdown voltage BVEBO IE= -50mA - 5 - - V Collector-emitter breakdown voltage BVCEO IC= -1mA - 50 - - m A Emitter cut-off current IEBO VEB = -4V - - - 0.5 m A Collector cut-off current ICBO VCB = -50V - - - 0.5 V DC current gain hFE VCE= -5V , IC= -1mA , 100 250 600 - Collector-emitter saturation voltage VCE(sat) IC / IB= -5mA / -0.25mA - - - 0.3 kW Transition frequency fT *1 VCE = -10V, IE = 5mA, f = 100MHz - 250 - MHz Input resistance R1 - 3.29 4.7 6.11 PC *2 150 (Total) *3 300 (Total) *4 mW mW 2/6 2012.06 - Rev.B |
类似零件编号 - FMA3A |
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类似说明 - FMA3A |
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