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2N4416A 数据表(PDF) 1 Page - Micross Components |
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2N4416A 数据表(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N4416A EXCEPTIONAL GAIN (400 MHz) 10dB (min) VERY LOW NOISE FIGURE (400 MHz) 4dB (max) VERY LOW DISTORTION HIGH AC/DC SWITCH OFF‐ISOLATION ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature ‐55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation 300mW MAXIMUM CURRENT Gate Current (Note 1) 10mA MAXIMUM VOLTAGES Gate to Drain or Gate to Source ‐35V 2N4416A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐35 ‐‐ ‐‐ V IG = ‐1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐2.5 ‐‐ ‐6 V VDS = 15V, ID = 1nA IDSS Gate to Source Saturation Current 5 ‐‐ 15 mA VDS = 15V, VGS = 0V IGSS Gate Leakage Current ‐‐ ‐‐ ‐0.1 nA VGS = ‐20V, VDS = 0V gfs Forward Transconductance 4500 ‐‐ 7500 µS VDS = 15V, VGS = 0V, f = 1kHz gos Output Conductance ‐‐ ‐‐ 50 µS Ciss Input Capacitance 2 ‐‐ ‐‐ 0.8 pF VDS = 15V, VGS = 0V, f = 1MHz Crss Reverse Transfer Capacitance 2 ‐‐ ‐‐ 4 pF Coss Output Capacitance 2 ‐‐ ‐‐ 2 pF en Equivalent Input Noise Voltage ‐‐ 6 ‐‐ nV/√Hz VDS = 10V, VGS = 0V, f = 1kHz 2N4416A HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC 100 Mhz 400 Mhz UNITS CONDITIONS MIN MAX MIN MAX gIss Input Conductance ‐‐ 100 ‐‐ 1000 µS VDS = 15V, VGS = 0V bIss Input Susceptance 2 ‐‐ 2500 ‐‐ 10000 goss Output Conductance ‐‐ 75 ‐‐ 100 boss Output Susceptance 2 ‐‐ 1000 ‐‐ 4000 Gfs Forward Transconductance ‐‐ ‐‐ 4000 ‐‐ Gps Power Gain 2 18 ‐‐ 10 ‐‐ dB VDS = 15V, ID = 5mA NF Noise Figure 2 ‐‐ 2 ‐‐ 4 VDS = 15V, ID = 5mA, RG = 1kΩ NOTES 1 . Absolute maximum ratings are limiting values above which 2N4416A serviceability may be impaired. 2. Not production tested, guaranteed by design The 2N4416A is a N-Channel high frequency JFET amplifier 2N4416A N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4416A The 2N4416A N-channel JFET is designed to provide high-performance amplification at high frequencies. The hermetically sealed TO-18 package is well suited for military applications and harsh environment applications. 2N4416A Applications: High-Frequency Amplifier / Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches 2N4416A Benefits: Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Available Packages: 2N4416A in TO-18 2N4416A in bare die. Please contact Micross for full package and die dimensions TO-18 (Bottom View) |
类似零件编号 - 2N4416A |
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类似说明 - 2N4416A |
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