2SD1209K datasheet(3/6 Pages) HITACHI

部件名	2SD1209K

功能描述	Silicon NPN Epitaxial, Darlington

Download	6 Pages

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制造商	HITACHI [Hitachi Semiconductor]

网页	http://www.renesas.com/eng

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2SD1209(K)

3

0

0.4

0.8

1.2

50

Ambient Temperature Ta (

°C)

Maximum Collector Dissipation Curve

100

150

1.0

0.5

0.2

0.1

5

2

10

5

2

Collector to Emitter Voltage VCE (V)

Area of Safe Operation

10

20

50

100

Ta = 25

°C

1 Shot Pulse

iC(peak)

0.2

0.1

0

0.4

0.3

0.5

2

1

Collector to Emitter Voltage VCE (V)

Typical Output Characteristics

34

5

Ta = 25

°C

Pulse

IB = 0

2 µA

4

6

8

10

12

14

16

0.01

105

104

103

0.05

0.02

Collector Current IC (A)

DC Current Transfer Ratio vs.

Collector Current

0.1

0.2

0.5

1.0

VCE = 3 V

Pulse

Ta = –25°C

25

75

类似零件编号 - 2SD1209K

制造商	部件名	数据表	功能描述
Renesas Technology Corp	2SD1209K	156Kb / 6P	Silicon NPN Epitaxial, Darlington
Renesas Technology Corp	2SD1209KTZ-E	156Kb / 6P	Silicon NPN Epitaxial, Darlington

More results

类似说明 - 2SD1209K

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	2SC1472	47Kb / 8P	Silicon NPN Epitaxial, Darlington
	2SD1470	32Kb / 6P	Silicon NPN Epitaxial, Darlington
	2SD1978	32Kb / 6P	Silicon NPN Epitaxial, Darlington
	2SD2213	32Kb / 6P	Silicon NPN Epitaxial, Darlington
	2SD2423	34Kb / 6P	Silicon NPN Epitaxial, Darlington
	2SC3957	33Kb / 6P	Silicon NPN Epitaxial, Darlington
Renesas Technology Corp	2SD1978	159Kb / 6P	Silicon NPN Epitaxial, Darlington
Renesas Technology Corp	2SD1472	127Kb / 8P	Silicon NPN Epitaxial, Darlington
Hitachi Semiconductor	2SD2046	32Kb / 6P	Silicon NPN Epitaxial, Darlington
Renesas Technology Corp	2SD1209	156Kb / 6P	Silicon NPN Epitaxial, Darlington