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2SC2308 数据表(PDF) 3 Page - Hitachi Semiconductor |
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2SC2308 数据表(HTML) 3 Page - Hitachi Semiconductor |
3 / 6 page 2SC458, 2SC2308 3 Electrical Characteristics (Ta = 25°C) 2SC458 2SC2308 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 30 — — 55 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 30 — — 50 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5 — —5 —— V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 — — 0.5 µAV CB =18 V, IE = 0 Emitter cutoff current I EBO — — 0.5 — — 0.5 µAV EB = 2 V, IC = 0 DC current transfer ratio h FE* 1 100 — 500 100 — 320 V CE = 12 V, IC = 2 mA Collector to emitter saturation voltage V CE(sat) — — 0.2 — — 0.2 V I C = 10 mA, IB = 1 mA Base to emitter voltage V BE — 0.67 0.75 — 0.67 0.75 V V CE = 12 V, IC = 2 mA Gain bandwidth product f T — 230 — — 230 — MHz V CE = 12 V, IC = 2 mA Collector output capacitance Cob — 1.8 3.5 — 1.8 3.5 pF V CB = 10 V, IE = 0, f = 1 MHz Noise figure NF — 4 10 — 4 10 dB V CE = 6 V, IC = 0.1 mA, f = 1 kHz, R g = 500 Ω Small signal input impedance h ie — 16.5 — — 16.5 — k Ω V CE = 5V, IC = 0.1mA, f = 270 Hz Small signal voltage feedback ratio h re — 70 ——70 — × 10–6 Small signal current trancefer ratio h fe — 130 — — 130 — Small signal output admittance h oe — 11.0 — — 11.0 — µS Note: 1. The 2SC458 and 2SC2308 are grouped by h FE as follows. BC D 2SC458 100 to 200 160 to 320 250 to 500 2SC2308 100 to 200 160 to 320 — See characteristic curves of 2SC458 (LG) and 2SC2310 except for the followings. |
类似零件编号 - 2SC2308 |
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类似说明 - 2SC2308 |
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