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2SC2855 数据表(PDF) 3 Page - Hitachi Semiconductor |
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2SC2855 数据表(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SC2855, 2SC2856 3 Electrical Characteristics (Ta = 25°C) 2SC2855 2SC2856 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 90 — — 120 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 90 — — 120 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5 — —5 —— V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.1 — — 0.1 µAV CB = 70 V, IE = 0 Emitter cutoff current I EBO — — 0.1 — — 0.1 µAV EB = 2 V, IC = 0 DC current transfer ratio h FE* 1 250 — 800 250 — 800 V CE = 12 V, IC = 2 mA* 2 Collector to emitter saturation voltage V CE(sat) — 0.05 0.10 — 0.05 0.10 V I C = 10 mA, IB = 1 mA* 2 Base to emitter saturation voltage V BE(sat) — 0.7 1.0 — 0.7 1.0 V Gain bandwidth product f T — 310 — — 310 — MHz V CE = 6 V, IC = 10 mA Collector output capacitance Cob — 3 — — 3 — pF V CB = 10 V, IE = 0, f = 1 MHz Noise figure NF — 0.15 1.5 — 0.15 1.5 dB V CE = 6 V, IC = 0.1 mA, R g = 10 kΩ, f = 1 kHz — 0.2 2.0 — 0.2 2.0 dB V CE = 6 V, IC = 0.1 mA, R g = 10 kΩ, f = 10 Hz Noise voltage referred to input e n — 0.7 — — 0.7 — nV/ √Hz V CE = 6 V, IC = 10 mA, R g = 0, f = 1 kHz Notes: 1. The 2SC2855 and 2SC2856 are grouped by h FE as follows. 2. Pulse test DE 250 to 500 400 to 800 |
类似零件编号 - 2SC2855 |
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类似说明 - 2SC2855 |
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