FQD6N50CTM datasheet(3/8 Pages) FAIRCHILD

部件名	FQD6N50CTM

功能描述	N-Channel QFET MOSFET 500 V, 4.5 A, 1.2

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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3 / 8 page

FQD6N50C Rev. C1

www.fairchildsemi.com

3

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2

468

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

※

Notes :

1. V

DS = 40V

2. 250μs Pulse Test

V

GS, Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

150℃

※

Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

V

SD, Source-Drain voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom: 5.0 V

※

Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

0

5

10

15

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V

GS = 20V

V

GS = 10V

※

Note : T

J = 25℃

I

D, Drain Current [A]

10

-1

10

0

10

1

0

200

400

600

800

1000

1200

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※

Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

5

10

15

20

0

2

4

6

8

10

12

V

DS = 250V

V

DS = 100V

V

DS = 400V

※

Note : I

D = 4.5A

Q

G, Total Gate Charge [nC]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

类似零件编号 - FQD6N50CTM

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FQD6N50C	687Kb / 9P	These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
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Fairchild Semiconductor	FQD6N50C	762Kb / 9P	500V N-Channel MOSFET

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