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FQD1P50 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FQD1P50 数据表(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  Rev. B3 January 2009 ©2009 Fairchild Semiconductor Corporation Elerical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 138mH, IAS = -1.2A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -1.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -500 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- - -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -500 V, VGS = 0 V -- -- -1 µA VDS = -400 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -0.6 A -- 8.0 10.5 Ω gFS Forward Transconductance VDS = -50 V, ID = -0.6 A (Note 4) -- 1.12 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 270 350 pF Coss Output Capacitance -- 40 50 pF Crss Reverse Transfer Capacitance -- 6.0 8.0 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -250 V, ID = -1.5 A, RG = 25 Ω (Note 4, 5) -- 9.0 30 ns tr Turn-On Rise Time -- 25 60 ns td(off) Turn-Off Delay Time -- 27 65 ns tf Turn-Off Fall Time -- 30 70 ns Qg Total Gate Charge VDS = -400 V, ID = -1.5 A, VGS = -10 V (Note 4, 5) -- 11 14 nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge -- 5.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -1.2 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -4.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.2 A -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = -1.5 A, dIF / dt = 100 A/µs (Note 4) -- 200 -- ns Qrr Reverse Recovery Charge -- 0.7 -- µC |
类似零件编号 - FQD1P50 |
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类似说明 - FQD1P50 |
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