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IXTT10N100D 数据表(PDF) 4 Page - IXYS Corporation |
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IXTT10N100D 数据表(HTML) 4 Page - IXYS Corporation |
4 / 5 page IXTT10N100D IXTH10N100D IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 7. Input Admittance 0 1 2 3 4 5 6 7 8 9 10 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Volts TJ = 125ºC 25ºC - 40ºC Fig. 8. Transconductance 0 1 2 3 4 5 6 7 8 9 012345 6789 10 ID - Amperes TJ = - 40ºC 25ºC 125ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 5 10 15 20 25 30 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VSD - Volts TJ = 125ºC TJ = 25ºC VGS = -10V Fig. 11. Gate Charge -6 -4 -2 0 2 4 6 8 10 0 20 40 60 80 100 120 140 QG - NanoCoulombs VDS = 500V I D = 5A I G = 10mA Fig. 12. Capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 10. Breakdown & Threshold Voltages vs. Junction Temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VGS(off) @ VDS = 25V BVDSS @ VGS = -10V |
类似零件编号 - IXTT10N100D |
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类似说明 - IXTT10N100D |
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