BAT46W datasheet(2/2 Pages) GE

部件名	BAT46W

功能描述	Schottky Diodes

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制造商	GE [General Semiconductor]

网页	http://www.vishay.com

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ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

BAT46W

Symbol

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

tested with 100

µA Pulses

V(BR)R

100

––V

Forward Voltage

Pulse Test tp < 300 µs, δ < 2%

at IF = 0.1 mA

at IF = 10 mA

at IF = 250 mA

VF

–

0.25

0.45

1

V

Leakage Current

Pulse Test tp < 300 µs, δ < 2%

at VR = 1.5 V

at VR = 1.5 V, Tj = 60 °C

at VR = 10 V

at VR = 10 V, Tj = 60 °C

at VR = 50 V

at VR = 50 V, Tj = 60 °C

at VR = 75 V

at VR = 75 V, Tj = 60 °C

IR

–

0.5

5

0.8

7.5

2

15

5

20

µA

Capacitance

at VR = 0 V, f = 1 MHz

at VR = 1 V, f = 1 MHz

Ctot

–

10

6

–

pF

Thermal Resistance Junction to Ambient Air

RthJA

––0.3 2)

K/mW

2) Valid provided that electrodes are kept at ambient temperature

类似零件编号 - BAT46W

制造商	部件名	数据表	功能描述
STMicroelectronics	BAT46W	53Kb / 5P	SMALL SIGNAL SCHOTTKY DIODE
Intersil Corporation	BAT46W	531Kb / 10P	ISL6844 Reference Design: ISL6844EVAL3Z
Diodes Incorporated	BAT46W	277Kb / 5P	SURFACE MOUNT SCHOTTKY BARRIER DIODE
Diodes Incorporated	BAT46W	65Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER DIODE DS30044 Rev. 4 - 2
Micro Commercial Compon...	BAT46W	229Kb / 3P	200mW Schottky Diode 100 Volts High breakdown Voltage

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类似说明 - BAT46W

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