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STGB35N35LZ-1 数据表(PDF) 4 Page - STMicroelectronics

部件名 STGB35N35LZ-1
功能描述  Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGB35N35LZ-1 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGB35N35LZ, STGP35N35LZ
4/18
DocID12253 Rev 6
2
Electrical characteristics
(T
j
=25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
CES(clamped)
Collector emitter
clamped voltage
(V
GE
=0)
I
C
=2 mA,
345
V
I
C
=2 mA,
T
j
= - 40 °C to 150 °C
320
380
V
V
(BR)ECS
Emitter collector break-
down voltage (V
GE
=0)
I
C
= 75 mA
20
28
V
V
GE(clamped)
Gate emitter clamped
voltage
I
G
= ± 2 mA
12
14
16
V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 15 V, T
j
=150 °C
10
μA
V
CE
=200 V, T
j
=150 °C
100
μA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ±10 V
500
625
830
μA
R
GE
Gate emitter resistance
12
15
20
k
Ω
R
G
Gate resistance
1.5
k
Ω
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 1 mA,
T
j
=-40 °C
1.4
V
V
CE
=V
GE
, I
C
= 1 mA
1.2
1.6
2.3
V
V
CE
=V
GE
, I
C
= 1 mA,
T
j
=150 °C
0.7
V
V
CE(sat)
Collector-emitter
saturation voltage
V
GE
=4.5 V, I
C
= 10 A
1.15
1.5
V
V
GE
=4.5 V, I
C
= 15 A
1.3
1.7
V
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
ies
Input capacitance
V
CE
= 25V, f = 1MHz,
V
GE
= 0
-700
-
pF
C
oes
Output capacitance
-
150
-
pF
C
res
Reverse transfer
capacitance
-6
-
pF
Q
g
Gate charge
V
CE
= 280V, I
C
= 15A,
V
GE
= 5V
-49
-
nC


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