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SI4920DY-T1 数据表(PDF) 4 Page - Vishay Siliconix |
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SI4920DY-T1 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number: 70667 S09-0767-Rev. E, 04-May-09 Vishay Siliconix Si4920DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70667. Source-Drain Diode Forward Voltage Threshold Voltage 1 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 30 20 40 TJ = 150 °C TJ = 25 °C - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0 0.02 0.04 0.06 0.08 0.10 024 68 10 VGS - Gate-to-Source Voltage (V) ID = 6.9 A 0 5 10 15 20 25 30 0.01 0.10 1.00 10.00 Time (s) TC = 25 °C Single Pulse Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) 2 1 0.1 0.01 10-4 10-3 10-2 10-1 1 30 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 10 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 62.5 °C/W 3. T JM - T A = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
类似零件编号 - SI4920DY-T1 |
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类似说明 - SI4920DY-T1 |
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