2SK3341-01 datasheet(2/4 Pages) FUJI

部件名	2SK3341-01

功能描述	N-CHANNEL SILICON POWER MOS-FET

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制造商	FUJI [Fuji Electric]

网页	http://www.fujielectric.co.jp/eng/fdt/scd

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2

Characteristics

2SK3341-01

FUJI POWER MOSFET

0

25

50

75

100

125

150

0

50

100

150

200

250

300

350

400

Allowable Power Dissipation

PD=f(Tc)

Tc [

°C]

10

1

10

2

10

3

10

-1

10

0

10

1

10

2

100ms

10ms

1ms

100

µs

10

µs

Safe operating area

ID=f(VDS):Single Pulse,Tc=25°C

t=

1

µs

D.C.

VDS [V]

0

2

4

6

8

10

12

14

16

18

20

22

24

26

0

2

4

6

8

10

12

14

16

18

20

22

6.5V

20V

10V

7V

6.0V

5.5V

5.0V

VDS [V]

Typical Output Characteristics

ID=f(VDS):80µs pulse test,Tch=25°C

VGS=4.5V

01

234

56

78

0.01

0.1

1

10

VGS[V]

Typical Transfer Characteristic

ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C

0.1

1

10

0.1

1

10

ID [A]

Typical Transconductance

gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C

0

5

10

15

20

25

0.0

0.5

1.0

1.5

2.0

2.5

3.0

6.5V

ID [A]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80µs pulse test,Tch=25°C

10V

20V

7V

6.0V

5.5V

5.0V

VGS=

4.5V

t

T

D=

t

T

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