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STF20NM65N 数据表(PDF) 3 Page - STMicroelectronics

部件名 STF20NM65N
功能描述  N-channel 650 V, 0.250 廓, 15 A TO-220, TO-220FP second generation MDmesh??Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF20NM65N 数据表(HTML) 3 Page - STMicroelectronics

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STP20NM65N, STF20NM65N
Electrical ratings
Doc ID 13845 Rev 2
3/16
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
VDS
Drain source voltage
650
V
VGS
Gate source voltage
± 25
V
ID
Drain current continuous TC =25 °C
15
15(1)
1.
Limited only by maximum temperature allowed.
A
ID
Drain current continuous TC =100 °C
9.45
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current pulsed
60
A
PTOT
Total dissipation at TC=25 °C
125
30
W
dv/dt (3)
3.
ISD ≤15 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80 % V(BR)DSS.
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heatsink
(t=1 s; TC = 25 °C)
2500
V
Tstg
TJ
Storage temperature
Max. operating junction temperature
-55 to 150
150
°C
Table 3.
Thermal data
Symbol
Parameters
Value
Unit
TO-220
TO-220FP
Rthjc
Thermal resistance junction-case max.
1
4.17
°C/W
Rthja
Thermal resistance junction-ambient
max.
62.50
°C/W
TJ
Max. lead temperature for soldering
purposes
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameters
Value
Unit
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
4A
EAS
Single pulse avalanche energy (starting
TJ = 25 °C, ID = IAR, VDD = 50 V)
115
mJ


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