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STF20NM65N 数据表(PDF) 3 Page - STMicroelectronics |
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STF20NM65N 数据表(HTML) 3 Page - STMicroelectronics |
3 / 16 page STP20NM65N, STF20NM65N Electrical ratings Doc ID 13845 Rev 2 3/16 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220FP VDS Drain source voltage 650 V VGS Gate source voltage ± 25 V ID Drain current continuous TC =25 °C 15 15(1) 1. Limited only by maximum temperature allowed. A ID Drain current continuous TC =100 °C 9.45 A IDM (2) 2. Pulse width limited by safe operating area. Drain current pulsed 60 A PTOT Total dissipation at TC=25 °C 125 30 W dv/dt (3) 3. ISD ≤15 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80 % V(BR)DSS. Peak diode recovery voltage slope 15 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heatsink (t=1 s; TC = 25 °C) 2500 V Tstg TJ Storage temperature Max. operating junction temperature -55 to 150 150 °C Table 3. Thermal data Symbol Parameters Value Unit TO-220 TO-220FP Rthjc Thermal resistance junction-case max. 1 4.17 °C/W Rthja Thermal resistance junction-ambient max. 62.50 °C/W TJ Max. lead temperature for soldering purposes 300 °C Table 4. Avalanche characteristics Symbol Parameters Value Unit IAS Avalanche current, repetitive or not- repetitive (pulse width limited by Tj max) 4A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 115 mJ |
类似零件编号 - STF20NM65N |
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类似说明 - STF20NM65N |
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