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2SJ495 数据表(PDF) 2 Page - NEC |
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2SJ495 数据表(HTML) 2 Page - NEC |
2 / 8 page 2SJ495 2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On–state Resistance RDS(on)1 VGS = –10 V, ID = –15 A 24 30 m Ω RDS(on)2 VGS = –4 V, ID = –15 A 38 56 m Ω Gate to Source Cutoff Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.5 –2.0 V Forward Transfer Admittance | yfs |VDS = –10 V, ID = –15 A 12 24 S Drain Leakage Current IDSS VDS = –60 V, VGS = 0 –10 µA Gate to Source Leakage Current IGSS VGS = m 20 V, VDS = 0 m10 µA Input Capacitance Ciss VDS = –10 V 4120 pF Output Capacitance COSS VGS = 0 1750 pF Reverse Transfer Capacitance Crss f = 1 MHz 580 pF Turn-On Delay Time td(on) ID = –15 A 40 ns Rise Time tr VGS(on) = –10 V 220 ns Turn-Off Delay Time td(off) VDD = –30 V 600 ns Fall Time tf RG = 10 Ω 380 ns Total Gate Charge QG ID = –30 A 140 nC Gate to Source Charge QGS VDD = –48 V 12 nC Gate to Drain Charge QGD VGS = –10 V 46 nC Body Diode Forward Voltage VF(S-D) IF = 30 A, VGS = 0 0.8 1.5 V Reverse Recovery Time trr IF = 30 A, VGS = 0 160 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 400 nC Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T. PG. VDD RL RG = 10 Ω RG t VGS t = 1 s Duty Cycle ≤ 1% µ 0 VGS Wave Form VGS VGS(on) ID 0 D 10 % 10 % 90 % 90 % 90 % ID tf tr td(off) td(on) ton toff 10 % ID Wave Form D.U.T. IG = 2 mA PG. VDD RL 50 Ω |
类似零件编号 - 2SJ495 |
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类似说明 - 2SJ495 |
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