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2SJ448 数据表(PDF) 1 Page - NEC |
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2SJ448 数据表(HTML) 1 Page - NEC |
1 / 8 page MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ448 is P-Channel MOS Field Effect Transistor de- signed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on) = 2.0 Ω MAX. (@ VGS = –10 V, ID = –2.0 A) • Low Ciss Ciss = 470 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings • Isolated TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS –250 V Gate to Source Voltage VGSS m25 V Drain Current (DC) ID(DC) m4.0 A Drain Current (pulse)* ID(pulse) m16 A Total Power Dissipation (Tc = 25 ˚C) PT1 30 W Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current** IAS –4.0 A Single Avalanche Energy** EAS 80 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0 2SJ448 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D10029EJ1V0DS00 Date Published May 1995 P Printed in Japan Drain Source Body Diode Gate Gate Protection Diode MP-45F(ISOLATED TO-220) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2 1.3 ±0.2 1.5 ±0.2 2.54 2.54 0.7 ±0.1 0.65 ±0.1 2.5 ±0.1 12 3 1. Gate 2. Drain 3. Source PACKAGE DIMENSIONS (in millimeters) © 1995 DATA SHEET |
类似零件编号 - 2SJ448 |
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类似说明 - 2SJ448 |
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