数据搜索系统,热门电子元器件搜索 |
|
STB76NF75 数据表(PDF) 4 Page - STMicroelectronics |
|
STB76NF75 数据表(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STB76NF75, STI76NF75, STP76NF75 4/15 Doc ID 13780 Rev 2 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 75 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS= VGS , ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 40 A 0.0095 0.011 W Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VDS = 15 V, ID = 40 A - 20 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f = 1 MHz, VGS = 0 - 3700 730 240 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 60 V, ID = 80 A VGS =10 V - 117 27 47 160 nC nC nC |
类似零件编号 - STB76NF75 |
|
类似说明 - STB76NF75 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |