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MC-4R128FKK6K-840 数据表(PDF) 10 Page - Elpida Memory |
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MC-4R128FKK6K-840 数据表(HTML) 10 Page - Elpida Memory |
10 / 13 page MC-4R128FKK6K Preliminary Data Sheet E0269N10 (Ver. 1.0) 10 RIMM Module Current Profile IDD RIMM module power conditions Note1 MAX. Unit IDD1 One RDRAM device per channel in Read Note2, balance in NAP mode 1418 mA IDD2 One RDRAM device per channel in Read Note2, balance in Standby mode 1590 mA IDD3 One RDRAM device per channel in Read Note2, balance in Active mode 1680 mA IDD4 One RDRAM device per channel in Write, balance in NAP mode 1538 mA IDD5 One RDRAM device per channel in Write, balance in Standby mode 1710 mA IDD6 One RDRAM device per channel in Write, balance in Active mode 1800 mA Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage patterns. Please refer to specific RIMM module vendor data sheets for additional information. Power does not include Refresh Current. Max current computed for x16 256Mb RDRAM components. x18 288Mb RDRAM components use 8 mA more current per RDRAM device in Read and 60mA more current per RDRAM device in Write. 2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257mA for the following : VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL = VREF − 0.5V. |
类似零件编号 - MC-4R128FKK6K-840 |
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类似说明 - MC-4R128FKK6K-840 |
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