STB38N65M5 datasheet(6/22 Pages) STMICROELECTRONICS

部件名	STB38N65M5

功能描述	N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5

6/22

DocID022851 Rev 3

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d (v)

t

r (v)

t

f (i)

t

c(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

V

DD

= 400 V, I

D

= 20 A,

R

G

= 4.7

Ω, V

GS

= 10 V

(see

Figure 21 and

Figure 24)

-

66

9

13

-

ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

I

SDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-

30

120

A

V

SD

(2)

2.

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 30 A, V

GS

= 0

-

1.5

V

t

rr

Q

rr

I

RRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I

SD

= 30 A, di/dt = 100 A/μs

V

DD

= 100 V (see

Figure 24)

-

382

6.6

35

ns

μC

A

t

rr

Q

rr

I

RRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I

SD

= 30 A, di/dt = 100 A/μs

V

DD

= 100 V, T

j

= 150 °C

(see

Figure 24)

-

522

10.3

40

ns

μC

A

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