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ES3G 数据表(PDF) 1 Page - Guangdong Juxing Electronics Technology Co., Ltd. |
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ES3G 数据表(HTML) 1 Page - Guangdong Juxing Electronics Technology Co., Ltd. |
1 / 3 page Features ● Glass passivated chip junctions ● Ideal for automated placement ● Ultrafast reverse recovery time ● Low profile package ● High forward surge capability ● High temperature soldering: 260℃/10 seconds at terminals ● Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC Major Ratings and Characteristics Mechanical Date ● Case: JEDEC DO-214AA molded plastic body over glass passivated chip ● Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D ● Polarity: Laser band denotes cathode end 100 A 35 nS VF 0.95 V, 1.25 V, 1.7 V Tj max. 150 °C IF(AV) 3.0 A VRRM 50 V to 600 V IFSM trr Maximum Ratings & Thermal Characteristics (TA = 25 °C unless otherwise noted) Note 1: Mounted on P.C.B. with 0.28 x 0.28” (7.0 x 7.0mm) copper pad areas. Electrical Characteristics (TA = 25 °C unless otherwise noted) Note 2: Pulse test:300μs pulse width,1% duty cycle. ES3D ES3E Items Symbol ES3A ES3G ES3H ES3J UNIT 100 150 200 300 ES3B ES3C 400 500 600 V 70 105 140 210 420 V 100 150 200 300 A ℃ / W Thermal resistance from junction to lead (1) RθJL 400 500 600 V A Maximum DC blocking voltage ℃ Items Test conditions Symbol ES3A~D ES3E~G ES3H~J UNIT Maximum Instantaneous forward voltage IF=3A (2) VF 0.95 1.25 1.70 V Maximum reverse current VR=VDC TA=25℃ IR 5 μA TA=100℃ 50 Reverse recovery time IF=0.5A IR=1A Irr=0.25A trr 35 nS Typical junction capacitance 4.0 V ,1MHz CJ 45 pF 100 Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage VRMS 35 VDC 280 350 25 Operating junction and storage temperature range TJ, TSTG –55 to +150 50 Maximum average forward rectified current IF(AV) 3 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM http://www.trr-jx.com ES3A-ES3J Surface Mount Superfast Rectifiers |
类似零件编号 - ES3G |
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类似说明 - ES3G |
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