SA2B-E3, SA2D-E3, SA2G-E3, SA2J-E3, SA2K-E3, SA2M-E3

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Vishay General Semiconductor

Revision: 14-Aug-13

3

Document Number: 88969

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Typical Reverse Leakage Characteristics

Fig. 6 - Typical Junction Capacitance

Fig. 7 - Typical Transient Thermal Impedance

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PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

1000

100

10

10

20

30

40

50

60

70

80

90

100

1

0.1

0.01

Percent of Rated Peak Reverse Voltage (%)

T

T

T

100

100

10

10

1

1

0.1

Reverse Voltage (V)

T

f = 1.0 MHz

V

100

10

1

0.1

10

1

0.01

1000

100

t - Pulse Duration (s)

Junction to Ambient

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

0.030 (0.76)

0.060 (1.52)