SMS2310 datasheet(2/3 Pages) SECOS

部件名	SMS2310

功能描述	N-Channel Enhancement MOSFET

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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2 / 3 page

Elektronische Bauelemente

SMS2310

3A, 60V, RDS(ON) 105mΩ

Ω

N-Channel Enhancement MOSFET

13-Dec-2013 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

STATIC CHARACTERISTICS

Drain-Source Breakdown Voltage

V(BR)DSS

60

-

V

VGS = 0, ID = 250µA

Gate-Body Leakage Current

IGSS

-

±100

nA

VGS=±20V, VDS =0

Zero Gate Voltage Drain Current

IDSS

-

1

µA

VGS=0, VDS =60V

Gate Threshold Voltage

3

VGS(th)

0.5

-

2

V

VDS = VGS, ID = 250µA

-

105

VGS=10V, ID =3A

Static Drain-Source On Resistance

3

RDS(ON)

-

125

m

VGS=4.5V, ID =3A

Forward Transconductance

3

gFS

1.4

-

S

VDS=15V,ID =2A

Body diode forward voltage

3

VSD

-

1.2

V

VGS=0, IS =3A

Dynamic Characteristics

4

Input Capacitance

Ciss

-

247

-

Output Capacitance

Coss

-

34

-

Reverse Transfer Capacitance

Crss

-

19.5

-

pF

VDS=30V,

VGS=0,

f=1MHz

Switching Characteristics

4

Turn-On Delay Time

td(ON)

-

6

-

Rise time

tr

-

15

-

Turn-Off Delay Time

td(OFF)

-

15

-

Fall time

tr

-

10

-

nS

VDD=30V,

VGS=10V,

ID=1.5A,

RGEN=1 ,

Total Gate Charge

Qg

-

6

-

Gate-Source Charge

Qgs

-

1

-

Gate-Drain Charge

Qgd

-

1.3

-

nC

ID= 3A

VDS= 30V

VGS= 4.5V

Notes:

1.

Repetitive rating : Pulse width limited by junction temperature.

2.

Surface mounted on FR4 board , t≤10s.

3.

Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.

4.

Guaranteed by design, not subject to producting.

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