DCR1675SZ datasheet(4/8 Pages) DYNEX

部件名	DCR1675SZ

功能描述	Phase Control Thyristor

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制造商	DYNEX [Dynex Semiconductor]

网页	http://www.dynexsemi.com

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DCR1675SZ

DYNAMIC CHARACTERISTICS

Parameter

Symbol

Conditions

Typ.

Max.

Units

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

DRM = 5V,

T

case = 25

oC

Conditions

Parameter

Symbol

V

GT

Gate trigger voltage

V

DRM = 5V, Tcase = 25

oC

I

GT

Gate trigger current

V

GD

Gate non-trigger voltage

At V

DRM Tcase = 125

oC

V

FGM

Peak forward gate voltage

Anode positive with respect to cathode

V

FGN

Peak forward gate voltage

Anode negative with respect to cathode

V

RGM

Peak reverse gate voltage

I

FGM

Peak forward gate current

Anode positive with respect to cathode

P

GM

Peak gate power

See table, gate characteristics curve

P

G(AV)

Mean gate power

3.5

V

500

mA

0.25

V

30

V

0.25

V

5V

30

A

150

W

10

W

Max.

Units

I

RRM/IDRM

Peak reverse and off-state current

At V

RRM/VDRM, Tcase = 125

oC

From 67% V

DRM

to 1000A

Gate source 30V, 10

Ω

t

r = 0.5µs to 1A, Tj = 125

oC

dV/dt

Maximum linear rate of rise of off-state voltage

To 67% V

DRM Tj = 125

oC, gate open circuit.

-

500

mA

-

1000

V/

µs

Repetitive 50Hz

-

150

A/

µs

Non-repetitive

-

300

A/

µs

Rate of rise of on-state current

dI/dt

V

T(TO)

Threshold voltage

At T

vj = 125

oC

r

T

On-state slope resistance

At T

vj = 125

oC

t

gd

Delay time

1.0

-V

-

0.15

m

Ω

-

1.1

µs

V

D = 67% VDRM, Gate source 20V, 10Ω

t

r = 0.5µs, Tj = 25

oC

I

L

Latching current

T

j = 25

oC, V

D = 5V

I

H

Holding current

T

j = 25

oC, R

g-k = ∞

-

650

mA

-

200

mA

类似零件编号 - DCR1675SZ

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类似说明 - DCR1675SZ

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