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2SD1499 数据表(PDF) 2 Page - Savantic, Inc. |
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2SD1499 数据表(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1499 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 100 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 2.0 V VBE Base-emitter on voltage IC=3A ; VCE=5V 1.8 V ICBO Collector cut-off current VCB=100V; IE=0 50 µA IEBO Emitter cut-off current VEB=3V; IC=0 50 µA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 40 200 hFE-3 DC current gain IC=3A ; VCE=5V 20 fT Transition frequency IC=0.5A; VCE=5V 20 MHz COB Collector output capacitance f=1MHz ; VCB=10V 170 pF hFE-2 Classifications R Q P 40-80 60-120 100-200 |
类似零件编号 - 2SD1499 |
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类似说明 - 2SD1499 |
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