SILICON TRANSISTOR

2SC4703

MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. P10375EJ2V1DS00 (2nd edition)

Date Published March 1997 N

Printed in Japan

1994

©

DESCRIPTION

The 2SC4703 is designed for low distortion, low noise RF amplifier

This low distortion

characteristic makes it suitable for CATV, tele-communication and other

use. It employs surface mount type plastic package, Power Mini Mold

(SOT-89).

FEATURES

• Low distortion at low supply voltage.

/75

C)

Collector to Base Voltage

25

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

2.5

V

Collector Current

150

mA

Total Power Dissipation

1.8

W

Junction Temperature

150

C

Storage Temperature

55 to +150

C

* 0.7 mm

PACKAGE DIMENSIONS

(Unit: mm)

Term, Connection

E

C

B

(SOT-89)

: Emitter

: Collector (Fin)

: Base

0.41

−0.03

+0.05

0.47

±0.06

0.42±0.06

0.42

±0.06

4.5±0.1

1.6±0.2

3.0

EB

C

1.5

1.5±0.1