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MTBA5N10V8 数据表(PDF) 1 Page - Cystech Electonics Corp. |
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MTBA5N10V8 数据表(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C731V8 Issued Date : 2012.08.24 Revised Date : Page No. : 1/9 MTBA5N10V8 CYStek Product Specification N-Channel Logic Level Enhancement Mode Power MOSFET MTBA5N10V8 BVDSS 100V ID 7A VGS=10V, ID=5A 133 mΩ RDSON(TYP) VGS=4.5V, ID=5A 140 mΩ Description The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTBA5N10V8 DFN3×3 Pin 1 G:Gate D:Drain S:Source Ordering Information Device Package Shipping MTBA5N10V8-0-T1-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel |
类似零件编号 - MTBA5N10V8 |
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类似说明 - MTBA5N10V8 |
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