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MTB04N03E3 数据表(PDF) 5 Page - Cystech Electonics Corp. |
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MTB04N03E3 数据表(HTML) 5 Page - Cystech Electonics Corp. |
5 / 7 page CYStech Electronics Corp. Spec. No. : C889E3 Issued Date : 2013.02.20 Revised Date : 2013.02.26 Page No. : 5/7 MTB04N03E3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 20 40 60 80 100 120 01 23 45 VGS, Gate-Source Voltage(V) VDS=10V Single Pulse Maximum Power Dissipation 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) TJ(MAX)=175°C TC=25°C θJA=1.4°C/W Transient Thermal Response Curves 0.01 0.1 1 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.4 °C/W |
类似零件编号 - MTB04N03E3 |
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类似说明 - MTB04N03E3 |
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