2SC3809 datasheet(2/4 Pages) NEC

部件名	2SC3809

功能描述	NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

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制造商	NEC [NEC]

网页	http://www.nec.com/

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2SC3809

REGARDING CLEANSING

Cleanse the flux after soldering. Particularly, cleanse the bottom surface of the transistor so that flux does not remain.

If any flux remains on the bottom surface, it may absorb moisture, resulting in short circuit among pins due to metal-migration

at the metalized area of the transistor. You can use alcohol as a solvent.

Do not apply ultra-sonic-cleaning on this product.

TYPICAL CHARACTERISTICS (TA = 25

°°°°°C)

FEEDBACK CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

DC CURRENT GAIN vs.

COLLECTOR CURRENT

f = 1.0 MHz

2

1

0.5

0.3

0

VCE = 10 V

0.5 1.0

5.0 10

30

0.5

1

2

5

10

20

30

0.5

1

5

10

50

200

100

50

10

20

10

5.0

3.0

2.0

1.0

0.5

0.3

0.2

0.1

VCB - Collector to Base Voltage - V

IC - Collector Current - mA

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

VCE = 10 V

类似零件编号 - 2SC3809

制造商	部件名	数据表	功能描述
Renesas Technology Corp	2SC3809	164Kb / 6P	SILICON TRANSISTOR 1996

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