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STPSC2006CW 数据表(PDF) 2 Page - STMicroelectronics |
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STPSC2006CW 数据表(HTML) 2 Page - STMicroelectronics |
2 / 7 page Characteristics STPSC2006CW 2/7 Doc ID 018506 Rev 1 1 Characteristics To evaluate the conduction losses use the following equation: P = 1.2 x IF(AV) + 0.09 x IF 2 (RMS) Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) Forward rms current 18 A IF(AV) Average forward current Tc = 115 °C, δ = 0.5 Per diode 10 A Tc = 100 °C, δ = 0.5 Per device 20 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C 40 32 160 A IFRM Repetitive peak forward current δ = 0.1, T c = 110 °C, Tj = 150 °C 40 A Tstg Storage temperature range -55 to +175 °C Tj Maximum operating junction temperature range -40 to +175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode 2 °C/W Total 1.2 °C/W Rth(c) Coupling 0.4 °C/W Table 4. Static electrical characteristics per diode Symbol Parameter Tests conditions Min. Typ. Max. Unit IR (1) 1. tp = 10 ms, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM -30 150 µA Tj = 150 °C - 210 1500 VF (2) 2. tp = 500 µs, δ < 2% Forward voltage drop Tj = 25 °C IF = 10 A -1.4 1.7 V Tj = 150 °C - 1.6 2.1 Table 5. Other parameters per diode Symbol Parameter Test conditions Typ. Unit Qc Total capacitive charge Vr = 400 V, IF = 10 A dIF/dt = -200 A/µs Tj = 150 °C 12 nC C Total capacitance Vr = 0 V, Tc = 25 °C, F = 1 Mhz 650 pF |
类似零件编号 - STPSC2006CW |
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类似说明 - STPSC2006CW |
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