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BC849C 数据表(PDF) 3 Page - NXP Semiconductors |
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BC849C 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2004 Jan 16 3 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC849 − 30 V BC850 − 50 V VCEO collector-emitter voltage open base BC849 − 30 V BC850 − 45 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W |
类似零件编号 - BC849C |
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类似说明 - BC849C |
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