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IRFB4310ZPBF 数据表(PDF) 1 Page - International Rectifier

部件名 IRFB4310ZPBF
功能描述  High Efficiency Synchronous Rectification in SMPS
Download  11 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFB4310ZPBF 数据表(HTML) 1 Page - International Rectifier

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4/23/12
www.irf.com
1
HEXFET® Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
IRFB4310ZPbF
IRFS4310ZPbF
IRFSL4310ZPbF
D2Pak
IRFS4310ZPbF
TO-220AB
IRFB4310ZPbF
TO-262
IRFSL4310ZPbF
S
D
G
S
D
G
S
D
G
D
D
D
GD
S
Gate
Drain
Source
S
D
G
VDSS
100V
RDS(on) typ.
4.8m:
max.
6.0m:
ID (Silicon Limited)
127A c
ID (Package Limited)
120A
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case
k
–––
0.6
RCS
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
°C/W
RJA
Junction-to-Ambient, TO-220
k
–––
62
RJA
Junction-to-Ambient (PCB Mount) , D
2Pak jk
–––
40
475
See Fig. 14, 15, 22a, 22b,
250
18
-55 to + 175
± 20
1.7
10lb
xin (1.1Nxm)
300
Max.
127
c
90
c
560
120
PD -
97115D


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