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STB36NM60N 数据表(PDF) 4 Page - STMicroelectronics

部件名 STB36NM60N
功能描述  Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB36NM60N 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB36NM60ND, STW36NM60ND
4/18
DocID023785 Rev 3
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 600 V
VDS = 600 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 14.5 A
0.097
0.110
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-2785
-
pF
Coss
Output capacitance
-
168
-
pF
Crss
Reverse transfer
capacitance
-5
-
pF
Coss eq.
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
-
438
-
pF
td(on)
Turn-on delay time
VDD =300 V, ID = 14.5 A
RG =4.7 Ω, VGS = 10 V
(see Figure 16 and 21)
-30
-
ns
tr
Rise time
-
53.4
-
ns
td(off)
Turn-off delay time
-
111
-
ns
tf
Fall time
-
61.8
-
ns
Qg
Total gate charge
VDD = 480 V, ID = 29 A,
VGS = 10 V,
(see Figure 17)
-80.4
-
nC
Qgs
Gate-source charge
-
16
-
nC
Qgd
Gate-drain charge
-
41.4
-
nC
Rg
Gate input resistance
f=1 MHz , open drain
-
2.87
-
Ω


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