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GS1010FL 数据表(PDF) 2 Page - Unisonic Technologies |
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GS1010FL 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 3 page GS1010FL Preliminary DIODE UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw VER.a ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage VRRM 1000 V Maximum RMS Voltage VRMS 700 V Maximum DC Blocking Voltage VDC 1000 V Rectified Current (Average) Half Wave Rectification with Resist. Load at TA=25°C (Note 1) IO 1.0 A Surge Forward Current at t<1s, TJ=25°C IFSM 30 A Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Measured at 1MHz and applied reverse voltage of 0V D.C. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 200 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Forward Voltage VF IF=1.0A 1.1 V Leakage Current IR VR=1000V, TJ=25°C 10 μA VR=1000V, TJ=100°C 50 μA Junction Capacitance (Note) CJ 4.0 pF Note: Measured at 1MHz and applied reverse voltage of 4.0V D.C. |
类似零件编号 - GS1010FL |
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类似说明 - GS1010FL |
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