FJV3102R datasheet(2/5 Pages) FAIRCHILD

部件名	FJV3102R

功能描述	NPN Epitaxial Silicon Transistor with Bias Resistor

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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FJV3102R Rev. 1.1.2

2

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Note:

1. FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

PD

Power Dissipation

200

mW

Derate Above TA = 25°C

1.60

mW/°C

RθJA

Thermal Resistance, Junction to Ambient

625

°C/W

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVCBO

Collector-Base Breakdown Voltage

IC = 10 μA, IE = 0

50

V

BVCEO

Collector-Emitter Breakdown Voltage

IC = 100 μA, IB = 0

50

V

ICBO

Collector Cut-Off Current

VCB = 40 V, IE = 0

0.1

μA

hFE

DC Current Gain

VCE = 5 V, IC = 5 mA

30

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 10 mA, IB = 0.5 mA

0.3

V

fT

Current Gain Bandwidth Product

VCE = 10 V, IC = 5 mA

250

MHz

Cob

Output Capacitance

VCB = 10 V, IE = 0,

f = 1.0 MHz

3.7

pF

VI(off)

Input-Off Voltage

VCE = 5 V, IC = 100 μA0.5

V

VI(on)

Input-On Voltage

VCE = 0.3 V, IC = 10 mA

3

V

R1

Input Resistor

7

10

13

k

Ω

R1/R2

Resistor Ratio

0.9

1.0

1.1

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