数据搜索系统,热门电子元器件搜索 |
|
IRF840 数据表(PDF) 1 Page - Nell Semiconductor Co., Ltd |
|
IRF840 数据表(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 7 page SEMICONDUCTOR RoHS RoHS N-Channel Power MOSFET Nell High Power Products IRF840 Series (8A, 500Volts) The Nell IRF840 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. DESCRIPTION Low reverse transfer capacitance (C = 120pF typical) RSS R = 0.85Ω @ V = 10V DS(ON) GS Ultra low gate charge(63nC Max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature FEATURES PRODUCT SUMMARY I (A) D 8 V (V) DSS 500 0.85 @ V = 10V GS 63 R (Ω) DS(ON) Q (nC) max. G UNIT V /ns V W /°C A mJ ºC -55 to 150 VALUE 8 5.1 500 ±20 32 500 125 3.5 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified) C T =25°C to 150°C J TEST CONDITIONS R =20KΩ GS V =10V, GS T =25°C C V =10V, GS T =100°C C Operation junction temperature Storage temperature Peak diode recovery dv/dt(Note 3) PARAMETER Pulsed Drain current(Note 1) Continuous Drain Current Total power dissipation Gate to Source voltage Drain to Gate voltage Drain to Source voltage(Note 1) SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . . lbf in (N m) 300 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 Note: 1.Repetitive rating: pulse width limited by junction temperature. 10 (1.1) 1.6mm from case IAR Repetitive avalanche current(Note 1) 8 T =25°C C 2 .V = 50V, L=14mH, l =8A, R =25Ω, starting T =25°C DD AS G J 510 Single pulse avalanche energy(Note 2) EAS 3 .I ≤ 8A, di/dt ≤ 100A/µs, V ≤ V , T 150°C. SD DD (BR)DSS J ≤ 1 Derating factor above 25 °C They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators. convertors, UPS, switching mode power supplies and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. (IRF840A) TO-220AB D S G D mJ 13 Repetitive avalanche energy(Note 1) EAR l =8A, R =10V AR GS =50Ω, V GS l =8A, =14mH AS L D (Drain) G (Gate) S (Source) W www.nellsemi.com Page 1 of 7 |
类似零件编号 - IRF840 |
|
类似说明 - IRF840 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |