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1N4454 数据表(PDF) 1 Page - Digitron Semiconductors |
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1N4454 数据表(HTML) 1 Page - Digitron Semiconductors |
1 / 2 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20121218 1N3064, 1N4305, 1N4454 SWITCHING RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit Maximum working inverse voltage WIV 50 V Average rectified current IO 100 mA Forward current steady state IF 300 mA Recurrent peak forward current if 400 mA Peak forward surge current Pulse width = 1.0s Pulse width = 1.0µs if(surge) 1.0 4.0 A Power dissipation Maximum total dissipation Linear derating factor (from 25°C) PD 500 3.33 mW mW/°C Storage temperature range Tstg -65 to +200 °C Maximum junction temperature TJ +175 °C Lead temperature TL +260 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Test Condition Forward voltage 1N3064 1N4454 1N4305 VF 0.610 0.550 0.505 - - 0.700 0.710 0.650 0.575 1.000 1.000 0.850 V IF = 2.0mA IF = 1.0mA IF = 250µA IF = 10mA IF = 10mA IF = 10mA Reverse current IR - 0.1 100 µA VR = 50V VR = 50V, TA = 150°C Breakdown voltage BV 75 - V IR = 5.0µA Reverse recovery time(1) 1N4305 1N3064 1N4305 1N4454 trr - - - - 2.0 4.0 4.0 4.0 ns IF = 10mA, VR = 6.0V, RL = 100Ω IF = IR = 10mA, VR = 1.0V, RL = 100Ω IF = IR = 10mA, VR = 1.0V RL = 100Ω IF = IR = 10mA, VR = 1.0V RL = 100Ω Capacitance C - 2.0 pF VR = 0, f = 1.0MHz Rectification efficiency(2) RE 45 - % f = 1.0MHz Typical forward voltage temperature coefficient ΔVF/°C 3.0 mV/°C Note 1: Recovery to 1.0mA Note 2: Rectification efficiency is defined as the ratio of dc load voltage to peak rf input voltage to the detector circuit, measured with 2.0V rms input to the circuit. Load resistance 5.0Ω, load capacitance 20pF. |
类似零件编号 - 1N4454 |
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类似说明 - 1N4454 |
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