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BTB5240N3 数据表(PDF) 1 Page - Cystech Electonics Corp. |
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BTB5240N3 数据表(HTML) 1 Page - Cystech Electonics Corp. |
1 / 8 page CYStech Electronics Corp. Spec. No. : C195N3 Issued Date : 2013.05.10 Revised Date : Page No. : 1/8 BTB5240N3 CYStek Product Specification Low VCE(sat) PNP Epitaxial Planar Transistor BVCEO -40V IC -2A RCESAT(typ.) 0.106Ω BTB5240N3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.18V(typ)(IC=-2A, IB=-200mA). • Pb-free lead plating and halogen-free package Symbol Outline BTB5240N3 SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -7 V Collector Current(DC) IC -2 Collector Current(Pulsed)(Note 1) ICP -3 A 300 (Note 2) Power Dissipation PD 480 (Note 3) mW 417 Thermal Resistance, Junction to Ambient RθJA 260 °C/W Operating Junction Temperature Range Tj -65~+150 °C Storage Temperature Range Tstg -65~+150 °C Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%. 2. Device mounted on a FR-4 board of 2 oz, single sided copper, with area of minimum pad size. 3. Device mounted on a FR-4 board of 2 oz, single sided copper, with area of 1 cm². |
类似零件编号 - BTB5240N3 |
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类似说明 - BTB5240N3 |
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